Dynamic SIMS

  • Dynamic Secondary Ion Mass Spectrometry instruments capable of parts-per-billion sensitivity for depth profiling analysis.
  • Has high mass resolution capability, and often used for P doped samples in SI wafers (MR > 4000).
  • Depth profiling can be optimized for low energy ultra-shallow implants or for several micron deep layers.

Strengths Limitations

- High sensitivity of parts-per-billion
- Fast analysis time
- Capable of accurate ultra-shallow profiling
- High precision analysis for implants

- Limited peak list due to serial ion collection
- Surface analysis requires proper sample handling
- Must know which ions require profiling before the analysis starts
- Requires standards for quantification


CAMECA IMS3f Magnetic SIMS Instrument


Typical schematic of a dynamic SIMS instrument. High energy ions are supplied by an ion gun (1 or 2) and focused on to the target sample (3), which ionizes and sputters some atoms off the surface. These secondary ions are then collected by ion lenses (5) and filtered according to atomic mass (6), then projected onto an electron multiplier (7, top), Faraday cup (7, bottom), or CCD screen (8).


More information: http://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometry