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TOF SIMS

  • Time-of-flight Secondary Ion Mass Spectrometry is a versatile instrument capable of parts-per-million sensitivity or better with parallel detection for nearly all elements and molecules up to several thousand atomic mass units.
  • Mass resolved imaging provides mapping with lateral resolution better than 150nm.
  • Surface analysis sensitivity is comparable to TXRF, though it also provides lower mass range sensitivity and targeting of smaller areas.
  • Depth profiling with sputter ion guns can be optimized for low energy ultra-shallow implants or for several micron deep layers.

Specifications Applications

- Mass range: 0-10,000 amu
- High mass resolution: M/ΔM over 10000
- Sensitivity: ppm-ppb
- Detected element: H – U (Isotope)
- Depth resolution: <1 nm
- Lateral resolution: 0.1-1 µm
- Sputter gun: O2+: 0.25-2kv, Cs+: 0.25-2kv
- Analysis gun: Bi+, 25kv

- Surface analysis of organic and inorganic materials
- Elemental and molecular information about surface, thin layer, interfaces of material and surface contamination
- Positive & negative ion mass spectra and 2-D ion mass spectral image information
- 3-D ion image analysis
- Depth profile analysis



Courtesy of ION-TOF GmbH


Demo of pulsed Bi+ primary ion gun and parallel detection of secondary ions from a sample


Demo of Bi+ primary ion impacting sample surface, and secondary ions escaping


3D depth profile of Mo ions in semiconductor device


Depth profile of shallow B implant into Si wafer with 6 orders of dynamic range with detection limit below 1E16 at/cc


Secondary mass spectrum of Fe+ and molecular ions with mass resolution >10,000


More information: http://en.wikipedia.org/wiki/Time-of-flight_mass_spectrometry