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TOF SIMS

  • Time-of-flight Secondary Ion Mass Spectrometry is a versatile instrument capable of parts-per-million sensitivity or better with parallel detection for nearly all elements and molecules up to several thousand atomic mass units.
  • Mass resolved imaging provides mapping with lateral resolution better than 150nm.
  • Surface analysis sensitivity is comparable to TXRF, though it also provides lower mass range sensitivity and targeting of smaller areas.
  • Depth profiling with sputter ion guns can be optimized for low energy ultra-shallow implants or for several micron deep layers.

Strengths Limitations

- Parallel mass detection up to 10,000 amu Part-per-million sensitivity
- Retrospective region-of-interest analysis
- Lateral image resolution down to 100 nm

- Time consuming data processing
- Surface analysis requires proper sample handling
- Volatile materials may sublime in UHV
- Requires standards for quantification



Courtesy of ION-TOF GmbH


Demo of pulsed Bi+ primary ion gun and parallel detection of secondary ions from a sample


Demo of Bi+ primary ion impacting sample surface, and secondary ions escaping


3D depth profile of Mo ions in semiconductor device


Depth profile of shallow B implant into Si wafer with 6 orders of dynamic range with detection limit below 1E16 at/cc


Secondary mass spectrum of Fe+ and molecular ions with mass resolution >10,000


More information: http://en.wikipedia.org/wiki/Time-of-flight_mass_spectrometry