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TEM (Transmission Electron Microscope)

  • Transmission Electron Microscope (TEM) is a high resolution analysis technique that allows one to see detail on an atomic scale.
  • Samples are generally prepared until they are thin enough for electrons to penetrate through it to the detector.
  • Coupled with EDX or EELS, quantitative information can be obtained.
  • Another application of TEM is to make metrology measurements of crystalline, amorphous, layers, etc.

Specifications Applications

Electron source
- Flexible high tension (20, 40, 80, 120, 160, 200 kV and values in between)
- Schottky field emitter with high maximum beam current (> 100 nA)
- High probe current (0.5 nA or more in 1 nm probe)

- TEM point resolution (0.24nm)
- Information limit (0.14nm)
- TEM magnification range 25X-1030kx
- Maximum diffraction angle STEM HAADF resolution (0.19nm)
- STEM magnification range Maximum tilt angle with double-tilt holder + 40°
- EDS solid angle 0.13 srad
- Sample size 10um*4um*100nm(thickness)

- TEM Imaging and Measurement
- HRTEM Imaging
- EDS Elemental Mapping
- Diffraction analysis and Phase Reconstruction
- Planar View (PV) + Cross Section (XS) TEM
- One Stop Solution

TEM image showing transistor gate Oxide thickness

Transistor cross-section structure

Copper dual damascence metallization process

More information: http://en.wikipedia.org/wiki/Transmission_electron_microscopy